Preparation and thermochromic properties of Ce-doped VO2 films

• Published in: Materials research bulletin Vol. 48; no. 6; pp. 2268 - 2271
• Main Authors: Song, Linwei, Zhang, Yubo, Huang, Wanxia, Shi, Qiwu, Li, Danxia, Zhang, Yang, Xu, Yuanjie
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.06.2013
• Subjects: A. Optical materials; A. Thin films; B. Sol–gel chemistry; B. Sol–gel chemistry; A. Thin films; A. Optical materials
• ISSN: 0025-5408; 1873-4227
• DOI: 10.1016/j.materresbull.2013.02.016

This effect of doping concentration on the phase transition temperature of VO2 films demonstrates that the phase transition temperature is decreasing along with the increase of the Ce dopant concentrations. After doping Ce, the transition temperature of VO2 film changes appreciably. [Display omitted] ► Ce-doped VO2 films were prepared on muscovite substrate by inorganic sol–gel method for the first time. ► The cerium existing in the VO2 films in the form of Ce4+ and Ce3+ was substituted for part of V atoms in the lattice. ► Ce doping could remarkably reduce the particle size of the Ce-doped films compared with undoped films. ► The phase transition temperature of Ce-doped VO2 films decreased appreciably with maintaining high-quality phase transition. Mixture of cerium (III) nitrate hexahydrate and vanadium pentaoxide powder were used as precursor to prepare Ce-doped VO2 films on the muscovite substrate by inorganic sol–gel method. SEM, XRD and XPS were used to investigate the morphologies and structures of VO2 films. The results show that the VO2 films grow on the muscovite substrate with preferred orientated (011) plane and the Ce exists in the form of Ce4+ and Ce3+ replacing part of V atoms in the lattice. The infrared transmittance change was measured from room temperature to the temperature above the metal–insulator transition. The films have excellent thermochromic performance. The metal–insulator transition temperature of VO2 films changes appreciably with Ce doped, which decreases by 4.5°C per 1 at.% doping. Furthermore, Ce doping could remarkably reduce the particle size of VO2 films.