Built-in electric field thickness design for betavoltaic batteries

Isotope source energy deposition along the thickness direction of a semiconductor is calculated,based upon which an ideal short current is evaluated for betavoltaic batteries.Electron-hole pair recombination and drifting length in a PN junction built-in electric field are extracted by comparing the...

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Published inJournal of semiconductors Vol. 32; no. 9; pp. 62 - 65
Main Author 陈海洋 李大让 尹建华 蔡胜国
Format Journal Article
LanguageChinese
English
Published IOP Publishing 01.09.2011
Subjects
Carriers
Deposition
Drift
Electric batteries
Electric fields
Electrical junctions
Mathematical analysis
Semiconductors
内建电场
厚度方向
厚度设计
同位素源
电池
电流测量
短路电流
能量沉积
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Summary:Isotope source energy deposition along the thickness direction of a semiconductor is calculated,based upon which an ideal short current is evaluated for betavoltaic batteries.Electron-hole pair recombination and drifting length in a PN junction built-in electric field are extracted by comparing the measured short currents with the ideal short currents.A built-in electric field thickness design principle is proposed for betavoltaic batteries：after measuring the energy deposition depth and the carrier drift length,the shorter one should then be chosen as the built-in electric field thickness.If the energy deposition depth is much larger than the carrier drift length,a multi-junction is preferred in betavoltaic batteries and the number of the junctions should be the value of the deposition depth divided by the drift length.
Bibliography:betavoltaic battery; built-in electric field; electron-hole pair recombination; energy deposition
Chen Haiyang~＋,Li Darang,Yin Jianhua,and Cai Shengguo School of Mechanical Engineering,Beijing Institute of Technology,Beijing 100081,China
Isotope source energy deposition along the thickness direction of a semiconductor is calculated,based upon which an ideal short current is evaluated for betavoltaic batteries.Electron-hole pair recombination and drifting length in a PN junction built-in electric field are extracted by comparing the measured short currents with the ideal short currents.A built-in electric field thickness design principle is proposed for betavoltaic batteries：after measuring the energy deposition depth and the carrier drift length,the shorter one should then be chosen as the built-in electric field thickness.If the energy deposition depth is much larger than the carrier drift length,a multi-junction is preferred in betavoltaic batteries and the number of the junctions should be the value of the deposition depth divided by the drift length.
11-5781/TN
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/32/9/094009