Operation of poly bipolar transistors near liquid-helium temperatures (9 K)

• Published in: IEEE electron device letters Vol. 9; no. 4; pp. 177 - 179
• Main Authors: Kapoor, A.K., Jayadev, T.S.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.04.1988; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Bipolar transistors; Charge transfer devices; Current measurement; Doping; Electronics; Exact sciences and technology; Impurities; Packaging; Photonic band gap; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Temperature distribution; Temperature measurement; Testing; Performance evaluation; Transistor; Silicon; Voltage current curve; Polycrystal; Low temperature

Operation of bipolar transistors with poly emitters with current gain beta >25 at 77 K and beta >3 at 9 K has been demonstrated. In the temperature range of 300 K to 9 K, the plot of beta vs. temperature (T) exhibits a minimum at T equal to 40 K: decreasing monotonically from 300 K to 40 K, re...