Operation of poly bipolar transistors near liquid-helium temperatures (9 K)

Operation of bipolar transistors with poly emitters with current gain beta >25 at 77 K and beta >3 at 9 K has been demonstrated. In the temperature range of 300 K to 9 K, the plot of beta vs. temperature (T) exhibits a minimum at T equal to 40 K: decreasing monotonically from 300 K to 40 K, re...

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Bibliographic Details
Published inIEEE electron device letters Vol. 9; no. 4; pp. 177 - 179
Main Authors Kapoor, A.K., Jayadev, T.S.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.04.1988
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Bipolar transistors
Charge transfer devices
Current measurement
Doping
Electronics
Exact sciences and technology
Impurities
Packaging
Photonic band gap
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Temperature distribution
Temperature measurement
Testing
Performance evaluation
Transistor
Silicon
Voltage current curve
Polycrystal
Low temperature
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Summary:Operation of bipolar transistors with poly emitters with current gain beta >25 at 77 K and beta >3 at 9 K has been demonstrated. In the temperature range of 300 K to 9 K, the plot of beta vs. temperature (T) exhibits a minimum at T equal to 40 K: decreasing monotonically from 300 K to 40 K, remaining unchanged between 40 K to 30 K, and increasing slightly from 30 K to 9 K. This behavior is attributed to freezeout of acceptor impurities in the base for T<40 K.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.681