Operation of poly bipolar transistors near liquid-helium temperatures (9 K)
Operation of bipolar transistors with poly emitters with current gain beta >25 at 77 K and beta >3 at 9 K has been demonstrated. In the temperature range of 300 K to 9 K, the plot of beta vs. temperature (T) exhibits a minimum at T equal to 40 K: decreasing monotonically from 300 K to 40 K, re...
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| Published in | IEEE electron device letters Vol. 9; no. 4; pp. 177 - 179 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
New York, NY
IEEE
01.04.1988
Institute of Electrical and Electronics Engineers |
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| Abstract | Operation of bipolar transistors with poly emitters with current gain beta >25 at 77 K and beta >3 at 9 K has been demonstrated. In the temperature range of 300 K to 9 K, the plot of beta vs. temperature (T) exhibits a minimum at T equal to 40 K: decreasing monotonically from 300 K to 40 K, remaining unchanged between 40 K to 30 K, and increasing slightly from 30 K to 9 K. This behavior is attributed to freezeout of acceptor impurities in the base for T<40 K.< > |
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| AbstractList | Operation of bipolar transistors with poly emitters with current gain beta >25 at 77 K and beta >3 at 9 K has been demonstrated. In the temperature range of 300 K to 9 K, the plot of beta vs. temperature (T) exhibits a minimum at T equal to 40 K: decreasing monotonically from 300 K to 40 K, remaining unchanged between 40 K to 30 K, and increasing slightly from 30 K to 9 K. This behavior is attributed to freezeout of acceptor impurities in the base for T<40 K.< > Operation of bipolar transistors with poly emitters with current gain beta > 25 at 77 K and beta > 3 at 9 K has been demonstrated. In the temperature range of 300 K to 9 K, the plot of beta vs. temperature ( < e1 > T < /e1 > ) exhibits a minimum at < e1 > T < /e1 > equal to 40 K: decreasing monotonically from 300 K to 40 K, remaining unchanged between 40 K to 30 K, and increasing slightly from 30 K to 9 K. This behavior is attributed to freezeout of acceptor impurities in the base for < e1 > T < /e1 > < 40 K Operation of bipolar transistors with poly emitters with current gain beta greater than 25 at 77 K and beta greater than 3 at 9 K has been demonstrated. In the temperature range of 300 to 9 K, the plot of beta versus temperature T exhibits a minimum at T equal to 40 K: decreasing monotonically from 300 to 40 K, remaining unchanged between 40 to 30 K, and increasing slightly from 30 to 9 K. This unique behavior is attributed to freezeout or acceptor impurities in the base for T less than 40 K. (Author) Operation of bipolar transistors with poly emitters with current gain beta > 25 at 77 K and beta > 3 at 9 K has been demonstrated. In the temperature range of 300 to 9 K, the plot of beta versus temperature T exhibits a minimum at T equal to 40 K: decreasing monotonically from 300 to 40 K, remaining unchanged between 40 to 30 K, and increasing slightly from 30 to 9 K. This unique behavior is attributed to freezeout or acceptor impurities in the base for T < 40 K. |
| Author | Kapoor, A.K. Jayadev, T.S. |
| Author_xml | – sequence: 1 givenname: A.K. surname: Kapoor fullname: Kapoor, A.K. organization: Fairchild Res. Center, Palo Alto, CA, USA – sequence: 2 givenname: T.S. surname: Jayadev fullname: Jayadev, T.S. |
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| Cites_doi | 10.1109/T-ED.1968.16506 10.1109/IEDM.1978.189454 10.1109/T-ED.1981.20372 10.1016/0038-1101(77)90054-5 10.1109/T-ED.1982.21043 10.1109/T-ED.1987.22895 10.1109/T-ED.1987.22896 10.1109/T-ED.1980.19899 10.1103/PhysRev.96.28 |
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| Keywords | Performance evaluation Transistor Silicon Voltage current curve Polycrystal Low temperature |
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| References | kapoor (ref4) 1985 ref9 ref3 kauffman (ref7) 1968; 15 dillard (ref10) 1987; 34 ref6 ref11 wieder (ref8) 1978 kapoor (ref5) 1986 tang (ref2) 1980; 27 dumke (ref1) 1981; 28 |
| References_xml | – volume: 15 start-page: 732 year: 1968 ident: ref7 article-title: the temperature dependence of ideal gain in double diffused silicon transistors publication-title: IEEE Transactions on Electron Devices doi: 10.1109/T-ED.1968.16506 contributor: fullname: kauffman – start-page: 460 year: 1978 ident: ref8 article-title: arsenic emitter effects publication-title: 1978 International Electron Devices Meeting doi: 10.1109/IEDM.1978.189454 contributor: fullname: wieder – volume: 28 start-page: 494 year: 1981 ident: ref1 article-title: the effect of base doping on the performance of si bipolar transistors at low temperatures publication-title: IEEE Transactions on Electron Devices doi: 10.1109/T-ED.1981.20372 contributor: fullname: dumke – start-page: 184 year: 1985 ident: ref4 article-title: A high-speed, high-density single poly technology for linear/digital applications publication-title: Proc IEEE Custom Integrated Circuits Conf contributor: fullname: kapoor – ident: ref11 doi: 10.1016/0038-1101(77)90054-5 – start-page: 33 year: 1986 ident: ref5 article-title: An improved single-poly bipolar technology for linear/digital applications publication-title: Proc IEEE Bipolar/Bi/CMOS Technology Meeting contributor: fullname: kapoor – ident: ref6 doi: 10.1109/T-ED.1982.21043 – ident: ref3 doi: 10.1109/T-ED.1987.22895 – volume: 34 start-page: 139 year: 1987 ident: ref10 article-title: the temperature dependence of the amplification factor of bipolar-junction transistors publication-title: IEEE Transactions on Electron Devices doi: 10.1109/T-ED.1987.22896 contributor: fullname: dillard – volume: 27 start-page: 563 year: 1980 ident: ref2 article-title: heavy doping effects in p-n-p bipolar transistors publication-title: IEEE Transactions on Electron Devices doi: 10.1109/T-ED.1980.19899 contributor: fullname: tang – ident: ref9 doi: 10.1103/PhysRev.96.28 |
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| Snippet | Operation of bipolar transistors with poly emitters with current gain beta >25 at 77 K and beta >3 at 9 K has been demonstrated. In the temperature range of... Operation of bipolar transistors with poly emitters with current gain beta > 25 at 77 K and beta > 3 at 9 K has been demonstrated. In the temperature range of... Operation of bipolar transistors with poly emitters with current gain beta greater than 25 at 77 K and beta greater than 3 at 9 K has been demonstrated. In the... |
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| SubjectTerms | Applied sciences Bipolar transistors Charge transfer devices Current measurement Doping Electronics Exact sciences and technology Impurities Packaging Photonic band gap Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Temperature distribution Temperature measurement Testing |
| Title | Operation of poly bipolar transistors near liquid-helium temperatures (9 K) |
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