High-Frequency Measurements on InAs Nanowire Field-Effect Transistors Using Coplanar Waveguide Contacts

• Published in: IEEE transactions on nanotechnology Vol. 9; no. 4; pp. 432 - 437
• Main Authors: Blekker, Kai, Munstermann, Benjamin, Matiss, Andreas, Do, Quoc Thai, Regolin, Ingo, Brockerhoff, Wolfgang, Prost, Werner, Tegude, Franz-Josef
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.07.2010; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Annealing; Applied sciences; Conductivity; Coplanar waveguides; Cross-disciplinary physics: materials science; rheology; Electronics; Epitaxial growth; Epitaxial layers; Exact sciences and technology; Fabrication; FETs; Gate length scaling; Gates; Gold; high-frequency characterization; InAs nanowire FET; Indium arsenides; Materials science; Nanocomposites; Nanomaterials; Nanoscale materials and structures: fabrication and characterization; Nanostructure; Nanowires; Parasitic capacitance; Physics; Power system reliability; Quantum wires; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Performance evaluation; high-frequency characterization; Oscillation frequency; Frequency measurement; Field effect transistor; Parasitic component; Nanowire device; Analytical method; Gate length scaling; InAs nanowire FET; Coplanar waveguides; Nanowires; High frequency; Comparative study; Gain; Wafer; Transconductance
• ISSN: 1536-125X; 1941-0085
• DOI: 10.1109/TNANO.2009.2032917

In this paper, a 50- μ m-pitch coplanar waveguide pattern for on-wafer high-frequency measurements on nanowire FET is used. The contact structure exhibits relatively large parasitic elements in comparison to the intrinsic device making a precise deembedding both necessary and challenging. A single InAs nanowire FET with a large gate length of 1.4 μ m possesses after deembedding a maximum stable gain higher than 30 dB and a maximum oscillation frequency of 15 GHz. The gate length scaling of the nanowire transistor is modeled using the experimental transconductance data of a set of transistors and an analytical model. On this basis, both the device performance and the expectation of high-frequency measurements at small gate lengths are discussed.