Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

Crack-free AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on a 200 mm Si substrate by metal--organic chemical vapor deposition (MOCVD) is presented. As grown epitaxial layers show good surface uniformity throughout the wafer. The AlGaN/GaN HEMT with the gate length of 1.5 μm exhibits a h...

Full description

Saved in:
Bibliographic Details
Published inApplied physics express Vol. 6; no. 2; pp. 026501 - 026501-4
Main Authors Christy, Dennis, Egawa, Takashi, Yano, Yoshiki, Tokunaga, Hiroki, Shimamura, Hayato, Yamaoka, Yuya, Ubukata, Akinori, Tabuchi, Toshiya, Matsumoto, Koh
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.02.2013
Online AccessGet full text

Cover

More Information
Summary:Crack-free AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on a 200 mm Si substrate by metal--organic chemical vapor deposition (MOCVD) is presented. As grown epitaxial layers show good surface uniformity throughout the wafer. The AlGaN/GaN HEMT with the gate length of 1.5 μm exhibits a high drain current density of 856 mA/mm and a transconductance of 153 mS/mm. The 3.8-μm-thick device demonstrates a high breakdown voltage of 1.1 kV and a low specific on-resistance of 2.3 m$\Omega$ cm 2 for the gate--drain spacing of 20 μm. The figure of merit of our device is calculated as $5.3\times 10^{8}$ V 2 $\Omega^{-1}$ cm -2 .
Bibliography:(a) Image of AlGaN/GaN HEMT grown on a 200-mm-diameter Si(111) substrate. (b, c) Mapping of the epitaxial film thickness and Al composition of AlGaN/GaN carried out by white light interference and photoluminescence, respectively. (a) Variations of Hall mobility and sheet carrier concentration along the horizontal and vertical directions from the center towards the edges of the wafer. (b) Temperature dependence of sheet carrier concentration and Hall mobility of AlGaN/GaN heterostructure. Inset: 2DEG carrier profile in the channel vs depth of epilayers. (a) $I$--$V$ characteristics and (b) transfer characteristics of AlGaN/GaN heterostructure grown on 200 mm Si substrate. Specific on-resistance dependence of breakdown voltage for various gate--drain spacing and comparison of results with those of other research groups.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.6.026501