High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance

InGaN-based micro-light-emitting diodes (μ-LEDs) emitting at 470 nm and composed of micropixels each with controlled shaping achieves directed light output with an angular full width at half maximum of 48°. The reflected light from the mesa sidewalls is azimuthally polarized. The small signal bandwi...

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Bibliographic Details
Published inApplied physics express Vol. 6; no. 2; pp. 022102 - 022102-3
Main Authors Maaskant, Pleun P, Shams, Haymen, Akhter, Mahbub, Henry, William, Kappers, Menno J, Zhu, Dandan, Humphreys, Colin J, Corbett, Brian
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.02.2013
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Summary:InGaN-based micro-light-emitting diodes (μ-LEDs) emitting at 470 nm and composed of micropixels each with controlled shaping achieves directed light output with an angular full width at half maximum of 48°. The reflected light from the mesa sidewalls is azimuthally polarized. The small signal bandwidth of an individual μ-LED is ${>}500$ MHz. A cluster of 14 μ-LEDs is used to achieve a large signal data transfer rate of 500 Mbps in a form which is compatible with communication over plastic optical fibre.
Bibliography:(a) Schematic concept of individual parabolic-shaped LED showing how the sidewall redirects rays into escape angles. The aspect ratio is the etch depth divided by the diameter of the emitting region. (b) SEM image of a 14-element μ-LED cluster. (a) Light collected into a numerical aperture of 0.5 as a function of current for an individual μ-LED. (b) Light current characteristics for a cluster of 14 μ-LEDs. The inset to (b) shows the near-field emission from the cluster when imaged through polarization-sensitive optics. Polar plot of the measured farfields from a single μ-LED and from a cluster of 14 μ-LEDs. (a) Small signal response from a single μ-LED and (b) small signal response from a cluster of 14 μ-LEDs. Eye diagrams as a function of bit rate from a cluster of 14 μ-LEDs.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.6.022102