A Few Techniques for Preparing Conductive Material Films for Sputtering-Type Electron Cyclotron Resonance Microwave Plasma
A few techniques are developed for preparing conductive material films for sputtering type electron cyclotron resonance microwave plasma. Microwave pressure window contamination, which is the most serious obstacle to conductive film preparation, can be avoided by using a vacuum microwave guide. Dens...
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| Published in | Japanese Journal of Applied Physics Vol. 28; no. 3; pp. L503 - L506 |
|---|---|
| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
01.03.1989
|
| Online Access | Get full text |
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| Summary: | A few techniques are developed for preparing conductive material films for sputtering type electron cyclotron resonance microwave plasma. Microwave pressure window contamination, which is the most serious obstacle to conductive film preparation, can be avoided by using a vacuum microwave guide. Dense plasmas of 10
11
cm
-3
are obtained at a gas pressure of 10
-2
Pa, and several metal films, including Al, Mo, Cu, and Fe films, are continuously deposited. Much denser plasmas of 10
12
cm
-3
are generated by high rate sputtering apparatus with an electric mirror, and films are deposited at rates of over 2000Å/min. |
|---|---|
| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/jjap.28.l503 |