Novel hexagonal-facet GaAs/AlGaAs laser grown by selective area metalorganic chemical vapour deposition

A GaAs hexagonal prism structure with (110) sidewall facets perpendicular to the (111)B substrate surface is obtained by selective area metalorganic chemical vapor deposition using a SiO 2 mask. These (110) sidewall facets are extremely smooth like a cleaved surface, so they can be used as the cavit...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 32; no. 9B; pp. L1293 - L1296
Main Authors ANDO, S, KOBAYASHI, N, ANDO, H
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 1993
Subjects
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers; laser diodes
Aluminium arsenides
Crystal growth
Gallium arsenides
Semiconductor lasers
DH lasers
Ternary compounds
Organometallic compounds
Binary compounds
Chemical vapor deposition
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Summary:A GaAs hexagonal prism structure with (110) sidewall facets perpendicular to the (111)B substrate surface is obtained by selective area metalorganic chemical vapor deposition using a SiO 2 mask. These (110) sidewall facets are extremely smooth like a cleaved surface, so they can be used as the cavities of a semiconductor laser. A novel hexagonal-facet (HF) GaAs/AlGaAs double heterojunction laser structure is proposed and preliminary lasing characteristics are presented. The average threshold of the optical pumping energy for the HF-laser array is approximately 18 pJ for 416 nm excitation. Single-mode (inscribed hexagonal mode) lasing at 875 nm is obtained at room temperature.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.32.l1293