Reflection high-energy electron diffraction intensity oscillations during Si MBE growth on HF-treated Si(111) surface

• Published in: Japanese Journal of Applied Physics Vol. 31; no. 8A; pp. L1103 - L1105
• Main Authors: KUMAGAI, Y, MATSUMOTO, H, FUJII, K, HASEGAWA, F
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.08.1992
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Crystal growth; Heat treatment; Semiconductor materials; Support; Hydrogen; Intensity; High temperature; Chemical etching; Experimental study; Thin film; Growth from vapor; Reflection high energy electron diffraction; Molecular beam condensation; Oscillation; Silicon; Dangling bond
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.31.l1103

Reflection high-energy electron diffraction (RHEED) intensity oscillations were observed when Si was directly grown at 450°C on the Si(111) surfaces treated with pH-modified (pH=9-10) buffered HF (BHF) solution without a conventional high-temperature cleaning step in ultrahigh vacuum (UHV). On the other hand, a 5% HF-treated Si(111) surface showed weak RHEED intensity oscillations even if a 800°C, 20 min heat treatment was performed before growth in UHV. These results indicate that the Si(111) surface treated with pH-modified BHF is flat and clean enough for direct Si molecular beam epitaxy (MBE) growth on it.