Planar defect-free pure red perovskite light-emitting diodes via metastable phase crystallization

• Published in: Science advances Vol. 8; no. 45; p. eabq2321
• Main Authors: Song, Yong-Hui, Ge, Jing, Mao, Li-Bo, Wang, Kun-Hua, Tai, Xiao-Lin, Zhang, Qian, Tang, Le, Hao, Jing-Ming, Yao, Ji-Song, Wang, Jing-Jing, Ma, Tao, Yang, Jun-Nan, Lan, Yi-Feng, Ru, Xue-Chen, Feng, Li-Zhe, Zhang, Guozhen, Lin, Yue, Zhang, Qun, Yao, Hong-Bin
• Format: Journal Article
• Language: English
• Published: United States American Association for the Advancement of Science 11.11.2022
• Subjects: Applied Sciences and Engineering; Physical and Materials Sciences; Physical Sciences; SciAdv r-articles
• ISSN: 2375-2548; 2375-2548
• DOI: 10.1126/sciadv.abq2321

Solution-processable all-inorganic CsPbI Br perovskite holds great potential for pure red light-emitting diodes. However, the widely existing defects in this mixed halide perovskite markedly limit the efficiency and stability of present light-emitting diode devices. We here identify that intragrain Ruddlesden-Popper planar defects are primary forms of such defects in the CsPbI Br thin film owing to the lattice strain caused by inhomogeneous halogen ion distribution. To eliminate these defects, we develop a stepwise metastable phase crystallization strategy to minimize the CsPbI Br perovskite lattice strain, which brings planar defect-free CsPbI Br thin film with improved radiative recombination, narrowed emission band, and enhanced spectral stability. Using these high-quality thin films, we fabricate spectrally stable pure red perovskite light-emitting diodes, showing 17.8% external quantum efficiency and 9000 candela meter brightness with color coordinates required by Rec. 2020.