Effect of barrier layers on the properties of indium tin oxide thin films on soda lime glass substrates

• Published in: Thin solid films Vol. 517; no. 14; pp. 4074 - 4077
• Main Authors: Lee, Jung-Min, Choi, Byung-Hyun, Ji, Mi-Jung, An, Yong-Tae, Park, Jung-Ho, Kwon, Jae-Hong, Ju, Byeong-Kwon
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 29.05.2009; Elsevier
• Subjects: Barrier layer; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Diffusion; Diffusion; interface formation; Exact sciences and technology; Indium tin oxide (ITO); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; RF-magnetron sputtering; Soda lime glass (SLG); Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); RF-magnetron sputtering; Indium tin oxide (ITO); Soda lime glass (SLG); Barrier layer; Diffusion; Aluminium oxide; Annealing; Secondary ion mass spectrometry; Indium oxide; Soda-lime glasses; Thin films; Cathode sputtering; Silicon oxides; Tin oxide; Optical properties; Physical vapor deposition; Electric resistivity; Sputter deposition; Radiofrequency sputtering
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2009.01.149

In this paper, the electrical, structural and optical properties of indium tin oxide (ITO) films deposited on soda lime glass (SLG) haven been investigated, along with high strain point glass (HSPG) substrate, through radio frequency magnetron sputtering using a ceramic target (In 2O 3:SnO 2, 90:10 wt.%). The ITO films deposited on the SLG show a high electrical resistivity and structural defects compared with those deposited on HSPG due to the Na ions from the SLG diffusing to the ITO film by annealing. However, these properties can be improved by intercalating a barrier layer of SiO 2 or Al 2O 3 between the ITO film and the SLG substrate. SIMS analysis has confirmed that the barrier layer inhibits the Na ion's diffusion from the SLG. In particular, the ITO films deposited on the Al 2O 3 barrier layer, show better properties than those deposited on the SiO 2 barrier layer.