Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene

The quantum Hall effect has been observed in quasi-free-standing monolayer graphene on SiC for the first time. This was achieved by decreasing the carrier density while applying gate voltage in top-gated devices. The charge neutrality point was also clearly observed, which has not been reported in t...

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Bibliographic Details
Published inApplied physics express Vol. 5; no. 12; pp. 125101 - 125101-3
Main Authors Tanabe, Shinichi, Takamura, Makoto, Harada, Yuichi, Kageshima, Hiroyuki, Hibino, Hiroki
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.12.2012
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Summary:The quantum Hall effect has been observed in quasi-free-standing monolayer graphene on SiC for the first time. This was achieved by decreasing the carrier density while applying gate voltage in top-gated devices. The charge neutrality point was also clearly observed, which has not been reported in top-gated structures. The mobilities at constant carrier densities did not show apparent temperature dependence up to 300 K, and conductivity was linearly dependent on carrier density. These results indicate that Coulomb scattering induced by charged impurities limits the mobility of quasi-free-standing monolayer graphene up to 300 K.
Bibliography:Raman spectrum of QFMLG measured at 532 nm. Spectrum of the substrate was subtracted. The inset shows the schematic of QFMLG. (a) Gate-voltage dependence of resistivity at 1.8 K and 0 T. The inset is a schematic of the top-gated QFMLG Hall bar. (b) Gate-voltage dependence of longitudinal resistance and Hall resistance at 1.8 K and 12 T. Carrier-density dependence of conductivity at 1.8, 100, and 300 K. The shaded region is the electron-hole puddle regime. Temperature dependence of mobility at constant carrier densities. Carrier types are indicated in the parentheses.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.5.125101