Growth of Pure Zinc Blende GaAs Nanowires： Effect of Size and Density of Au Nanoparticles

Pure zinc blende GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs（111）B substrates via Au catalyzed vapor-liquid-solid mechanism. The diameter, size distribution, and density of Au particles can be changed by varying the Au film thickness. We find that the grown nanowires...

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Bibliographic Details
Published inChinese physics letters Vol. 27; no. 4; pp. 186 - 188
Main Author 叶显 黄辉 任晓敏 杨一粟 郭经纬 黄永清 王琦
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.04.2010
Subjects
Blends
Density
Droplets
Gallium arsenide
Gallium arsenides
Gold
Nanowires
Zinc
化学气相沉积法
有机金属
砷化镓
粒子密度
纳米粒子
纳米线
闪锌矿结构
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Summary:Pure zinc blende GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs（111）B substrates via Au catalyzed vapor-liquid-solid mechanism. The diameter, size distribution, and density of Au particles can be changed by varying the Au film thickness. We find that the grown nanowires are of rod-like shapes and pure zinc blende structure; moreover, the growth rate depends on the density of Au particles and it is independent of its diameters. It can be concluded that the nanowire was grown with main contributions from the direct impingement of vapor species onto the Au-Ga droplets and contributions from adatom diffusion can be negligible. The results indicate that the droplet acts as a catalyst rather than an adatom collector.
Bibliography:11-1959/O4
O471.5
O614.123
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/27/4/046101