Polarized Emission From InGaN/GaN Single Nanorod Light-Emitting Diode

InGaN/GaN single nanorod (NR) light-emitting diodes (LEDs) have successfully been fabricated by nanoimprint lithography and focused ion beam-induced deposition. The current-voltage characteristics of single NR LEDs show low leakage current of 2 × 10 -12 A at a reverse bias of -5 V and turn-ON voltag...

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Published inIEEE photonics technology letters Vol. 28; no. 7; pp. 721 - 724
Main Authors Zhi, Ting, Tao, Tao, Liu, Bin, Zhuang, Zhe, Dai, Jiangping, Li, Yi, Zhang, Guogang, Xie, Zili, Chen, Peng, Zhang, Rong
Format Journal Article
LanguageEnglish
Published New York IEEE 01.04.2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
and single nanorod
Deposition
Electric fields
electroluminescence
Emission
Gallium nitrides
Indium gallium nitrides
Leakage current
Light emitting diodes
Nanostructure
Optical device fabrication
Optical polarization
polarization
Quantum well devices
Stimulated emission
Substrates
Voltage
Electroluminescence
polarization
light-emitting diodes
single nanorod
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Summary:InGaN/GaN single nanorod (NR) light-emitting diodes (LEDs) have successfully been fabricated by nanoimprint lithography and focused ion beam-induced deposition. The current-voltage characteristics of single NR LEDs show low leakage current of 2 × 10 -12 A at a reverse bias of -5 V and turn-ON voltage of ~3.8 V. Linear polarization-oriented parallel to the c-axis with a degree of ~50% was discovered from the electroluminescence emission of single NR LEDs.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2015.2506184