Fabrication of variable-thickness bridge using YBCO thin film

In-situ -grown YBCO thin films were prepared on a MgO substrate by rf magnetron sputtering with a dc-biased substrate holder using a stoichiometric Y 1 Ba 2 Cu 3 O y target. The variable-thickness bridges with the bridge length of 80 nm-200 nm were fabricated in these films by means of photolithogra...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 30; no. 9A; pp. L1556 - L1558
Main Authors CHAN HOON PARK, KOBAYASHI, T, GOTO, T
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.09.1991
Subjects
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Ion beam etching
Microelectronic fabrication
Josephson junction
Barium Copper Yttrium Oxides Mixed
High temperature superconductor
Thin film
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Summary:In-situ -grown YBCO thin films were prepared on a MgO substrate by rf magnetron sputtering with a dc-biased substrate holder using a stoichiometric Y 1 Ba 2 Cu 3 O y target. The variable-thickness bridges with the bridge length of 80 nm-200 nm were fabricated in these films by means of photolithography and slant evaporation techniques. The current-voltage characteristics of the bridge in rf radiation show the structure of the rf-induced steps over a wide temperature range.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.30.l1556