Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode

• Published in: Journal of semiconductors Vol. 32; no. 6; pp. 33 - 35
• Main Author: 陈丰平 张玉明 吕红亮 张义门 郭辉 郭鑫
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.06.2011
• Subjects: Anodes; Barriers; Contact resistance; Diodes; Guards; Multilayers; Semiconductors; SiC; Voltage; 击穿电压; 制备; 势垒; 欧姆接触; 特性; 电流密度; 肖特基二极管

4H-SiC junction barrier Schottky（JBS）diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently,and the other is processed by depositing a Schottky metal multi-layer on...