Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode

4H-SiC junction barrier Schottky（JBS）diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently,and the other is processed by depositing a Schottky metal multi-layer on...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductors Vol. 32; no. 6; pp. 33 - 35
Main Author 陈丰平 张玉明 吕红亮 张义门 郭辉 郭鑫
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.06.2011
Subjects
Anodes
Barriers
Contact resistance
Diodes
Guards
Multilayers
Semiconductors
SiC
Voltage
击穿电压
制备
势垒
欧姆接触
特性
电流密度
肖特基二极管
Online AccessGet full text

Cover

More Information
Summary:4H-SiC junction barrier Schottky（JBS）diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently,and the other is processed by depositing a Schottky metal multi-layer on the whole anode.The reverse performances are compared to find the influences of these factors.The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage,and with independent P-type ohmic contact manufacturing,the reverse performance of 4H-SiC JBS diodes can be improved effectively. Furthermore,the P-type ohmic contact is studied in this work.
Bibliography:4H-SiC junction barrier Schottky（JBS）diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently,and the other is processed by depositing a Schottky metal multi-layer on the whole anode.The reverse performances are compared to find the influences of these factors.The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage,and with independent P-type ohmic contact manufacturing,the reverse performance of 4H-SiC JBS diodes can be improved effectively. Furthermore,the P-type ohmic contact is studied in this work.
Chen Fengping,Zhang Yuming,Lu Hongliang,Zhang Yimen Guo Hui , Guo Xin School of Microelectronics,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University, Xi＇an 710071,China
4H-SiC; junction barrier Schottky; field guard ring
11-5781/TN
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/32/6/064003