Identification and control of the origin of photoluminescence from silicon quantum dots

We present a detailed investigation into the origin of photoluminescence (PL) from silicon quantum dots in hydrogenated amorphous silicon nitride annealed in oxygen ambient. On the basis of structural characterization, temperature-dependent PL, time-resolved PL, and PL excitation spectra, we identif...

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Bibliographic Details
Published inNanotechnology Vol. 19; no. 45; p. 455704
Main Authors Hao, H L, Shen, W Z
Format Journal Article
LanguageEnglish
Published England IOP Publishing 12.11.2008
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Summary:We present a detailed investigation into the origin of photoluminescence (PL) from silicon quantum dots in hydrogenated amorphous silicon nitride annealed in oxygen ambient. On the basis of structural characterization, temperature-dependent PL, time-resolved PL, and PL excitation spectra, we identify that the luminescence of the oxidized samples originates from the localized exciton radiative recombination via the surface states related to Si-N or Si-O-Si bonds. In combination with the results due to annealing in argon and hydrogen environments, we have further shown that control of the origin of the PL can be realized by modifying the radiative defect density through annealing treatment.
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ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/19/45/455704