Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes

Dominant nonradiative recombination mechanisms as a function of nonradiative current were investigated in InGaN blue light-emitting diodes (LEDs). Each radiative and nonradiative current components were separated from the total current by using the information of the internal quantum efficiency (IQE...

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Published inApplied physics express Vol. 6; no. 5; pp. 052105 - 052105-4
Main Authors Choi, Il-Gyun, Han, Dong-Pyo, Yun, Joosun, Kim, Kyu Sang, Shin, Dong-Soo, Shim, Jong-In
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.05.2013
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Summary:Dominant nonradiative recombination mechanisms as a function of nonradiative current were investigated in InGaN blue light-emitting diodes (LEDs). Each radiative and nonradiative current components were separated from the total current by using the information of the internal quantum efficiency (IQE), obtained from the temperature-dependent electroluminescence measurement. By analyzing voltage and light output power as functions of nonradiative current, we were able to understand that the dominant nonradiative mechanisms of the LEDs vary with the competing mechanisms of Shockley--Read--Hall or tunneling recombination at low current density to the carrier overflow at high current density, inducing the IQE droop.
Bibliography:(a) Forward $I$--$V$ and (b) IQE data for two different GaN LED devices. (a) Schematic diagram depicting various recombination current components in GaN LEDs and (b) its equivalent-circuit representation. (a) Radiative and (b) nonradiative current densities as a function of applied bias for samples A and B. Ideality factors for different current levels obtained from the nonradiative $I$--$V$ curves at room temperature of samples A and B. The inset shows the temperature dependent $I$--$V$ curves of (a) sample A and (b) sample B. Slope of $\log L$--$\log I_{\text{nr}}$ curves against $J_{\text{nr}}$ for samples A and B.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.6.052105