Photoluminescence spectroscopy of defects in ZnO nano/microwires

Photoluminescence spectroscopy is used to study defects found in single ZnO nano/microwires at 90K. The defect, acting as binding site for bound exciton （BX） transition, is represented by BF, the fractional intensity of the BX peak in the whole near-band edge ultraviolet （UV） luminescence. The conce...

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Published inChinese physics B Vol. 20; no. 6; pp. 458 - 461
Main Author 孙香冰 冯林 焦现炜
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.06.2011
Subjects
Defects
Excitation spectra
Nanocomposites
Nanomaterials
Nanostructure
Photoluminescence
Spectroscopy
Zinc oxide
ZnO
光致发光光谱
微丝
排放强度
束缚激子
纳米
结合位点
缺陷
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Summary:Photoluminescence spectroscopy is used to study defects found in single ZnO nano/microwires at 90K. The defect, acting as binding site for bound exciton （BX） transition, is represented by BF, the fractional intensity of the BX peak in the whole near-band edge ultraviolet （UV） luminescence. The concentration of defects as origins of the visible emissions is proportional to the intensity fraction DF, i.e., the intensity fraction of visible emissions in the sum total of all UV and visible luminescences. By comparing BF and DF, it is concluded that the two defects are not correlated to each other. The former kind of defect is considered to be related to the blueshift of the near-band edge peak as the radius of the nano/microwires decreases at room temperature.
Bibliography:ZnO, photoluminescence, defect
Photoluminescence spectroscopy is used to study defects found in single ZnO nano/microwires at 90K. The defect, acting as binding site for bound exciton （BX） transition, is represented by BF, the fractional intensity of the BX peak in the whole near-band edge ultraviolet （UV） luminescence. The concentration of defects as origins of the visible emissions is proportional to the intensity fraction DF, i.e., the intensity fraction of visible emissions in the sum total of all UV and visible luminescences. By comparing BF and DF, it is concluded that the two defects are not correlated to each other. The former kind of defect is considered to be related to the blueshift of the near-band edge peak as the radius of the nano/microwires decreases at room temperature.
Sun Xiang-Bing, Feng Lin and Jiao Xian-Wei（72465 Unit of the PLA, Jinan 250022, China b） School of Physics, Shandong University, Jinan 250100, China
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/6/067804