Ion beam-treated silicon probes operated in transmission and cross-polarized reflection mode near-infrared scanning near-field optical microscopy (NIR-SNOM)

We present aperture probes based on non‐contact silicon atomic force microscopy (AFM) cantilevers for simultaneous AFM and near‐infrared scanning near‐field optical microscopy (SNOM). For use in high‐resolution near‐field optical microscopy, conventional AFM cantilevers are modified by covering thei...

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Bibliographic Details
Published inSurface and interface analysis Vol. 27; no. 5-6; pp. 486 - 490
Main Authors Dziomba, Th, Sulzbach, Th, Ohlsson, O., Lehrer, Ch, Frey, L., Danzebrink, H. U.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Chichester, UK John Wiley & Sons, Ltd 01.05.1999
Wiley
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Summary:We present aperture probes based on non‐contact silicon atomic force microscopy (AFM) cantilevers for simultaneous AFM and near‐infrared scanning near‐field optical microscopy (SNOM). For use in high‐resolution near‐field optical microscopy, conventional AFM cantilevers are modified by covering their tip side with an aluminium layer to obtain an opaque coating. To fabricate an aperture, this metal layer is opened at the very end of the polyhedral probe using focused ion beams, thus allowing apertures of <200 nm in diameter to be created. We describe our concept and investigate the characteristics of these probes by discussing images in transmission and cross‐polarized internal reflection mode. Apart from probe characterization, our attention is devoted to the dependence of both signal amplitude and resolution on the tip‐to‐sample distance and to the polarization effects observed in the course of these investigations. To exclude artefacts induced by distance control, the measurements analysed here are performed in constant‐height mode. Copyright © 1999 John Wiley & Sons, Ltd.
Bibliography:ark:/67375/WNG-FD28TXFC-M
ArticleID:SIA498
istex:8800C6C7326F51F6B1E9BE533E655C0297BB1964
German Ministry of Education and Research - No. BMBF grant 13N7207
ISSN:0142-2421
1096-9918
DOI:10.1002/(SICI)1096-9918(199905/06)27:5/6<486::AID-SIA498>3.0.CO;2-6