Comparison of fitting procedures in the study of plasma-induced defect formation in carbon nanotubes

We have adopted different fitting procedures to study the Raman dispersion behavior of the G′ band in plasma‐treated multi‐walled carbon nanotubes (MWCNTs). Our analysis shows that the trend of the G′ band dispersion is related to the presence of defects in the MWCNTs. The intensity ratio dispersion...

Full description

Saved in:
Bibliographic Details
Published inPhysica Status Solidi (b) Vol. 248; no. 7; pp. 1645 - 1650
Main Authors Lee, Szetsen, Peng, Jr-Wei
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.07.2011
WILEY‐VCH Verlag
Wiley-VCH
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:We have adopted different fitting procedures to study the Raman dispersion behavior of the G′ band in plasma‐treated multi‐walled carbon nanotubes (MWCNTs). Our analysis shows that the trend of the G′ band dispersion is related to the presence of defects in the MWCNTs. The intensity ratio dispersions involving the $G'_{21} $, $G'_{32} $, $G'_{41} $, and $G'_{42} $ components of the G band behave in a similar way to the well known D to G band ratio ($D/G$), which is a good criterion for estimating the defect content in MWCNTs. The $G'_{21} $, $G'_{32} $, $G'_{41} $, and $G'_{42} $ peaks are shown to belong to the lower‐frequency components of the G′ band by using two‐, three‐, and four‐peak fitting procedures. Conversely, the higher‐frequency components $G'_{22} $, $G'_{33} $, $G'_{43} $, and $G'_{44} $ behave like the G band and are related to the non‐defect content. Consequently, the intensity ratios $G'_{21} /G'_{22} $, $G'_{32} /G'_{33} $, and $G'_{41 + 42} /G'_{43 + 44} $ show the same dispersion behavior as that of $D/G$. The difference of band position between the high and low frequency G′ band components is found to be sensitive to plasma treatment.
Bibliography:istex:823F6830A6A0C98EF61134FB77B4CA2A71FC37CE
ArticleID:PSSB201046467
ark:/67375/WNG-FQPX1LHH-0
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0370-1972
1521-3951
1521-3951
DOI:10.1002/pssb.201046467