2D Structures Based Field-Effect Transistors (Review)

• Published in: Journal of communications technology & electronics Vol. 67; no. 9; pp. 1134 - 1151
• Main Authors: Ponomarenko, V. P., Popov, V. S., Popov, S. V.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.09.2022; Springer; Springer Nature B.V
• Subjects: Communications Engineering; Design parameters; Engineering; Field effect transistors; Graphene; Hafnium compounds; Molybdenum disulfide; Networks; Phosphorene; Quantum dots; Semiconductor devices; Silicene; Single-electron transistors; Substrates; Tin disulfide; Transition metals; Tungsten disulfide; Two dimensional materials; 2D nanostructures; heterostructure; nanotransistor
• ISSN: 1064-2269; 1555-6557
• DOI: 10.1134/S1064226922090121

We review the design and main parameters of field-effect transistors based on 2D structures of transition metal di- and trichalcogenides MoS 2 , MoSe 2 , MoTe 2 , WS 2 , WSe 2 , Mo 1 ‒  x W x Se 2 , ZrS 2 , ZrSe 2 , HfS 2 , HfSe 2 , PtS 2 , PtSe 2 , PtTe 2 , PdSe 2 , ReS 2 , ReSe 2 , HfS 3 , ZrS 3 , TiS 3 , TaSe 3 , and NbS 3 , as well as monoatomic phosphorene (2DbP), antimonene (2DSb), arsenene (2DAs), silicene (2DSi), germanene (2DGe), and stanene (2DSn). Field-effect nanotransistors on flexible substrates, tunnel, and single-electron transistors based on van der Waals structures of graphene quantum dots, as well as transistors containing 2D heteropairs Gr‒(h)BN, Gr‒WS 2 , Gr‒(h)BC 2 N, Gr‒FGr, SnS 2 ‒WS 2 , SnSe 2 ‒WSe 2 , HfS 2 ‒MoS 2 , PdSe 2 ‒MoS 2 , and WSe 2 ‒WO 3 –  x are discussed.