Ion beam modification of plasmonic titanium nitride thin films

Titanium nitride is regarded as an alternative plasmonic material for its tunability and other high performances. In this work, we prepared TiN x thin films by ion beam assisted deposition and studied the effects of assisting ion energy E a on the structural, electrical, optical, and plasmonic prope...

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Bibliographic Details
Published inJournal of materials science Vol. 52; no. 11; pp. 6442 - 6448
Main Authors Zhang, Lin-ao, Liu, Hao-nan, Suo, Xiao-xia, Tong, Shou, Li, Ying-lan, Jiang, Zhao-tan, Wang, Zhi
Format Journal Article
LanguageEnglish
Published New York Springer US 01.06.2017
Springer
Springer Nature B.V
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Summary:Titanium nitride is regarded as an alternative plasmonic material for its tunability and other high performances. In this work, we prepared TiN x thin films by ion beam assisted deposition and studied the effects of assisting ion energy E a on the structural, electrical, optical, and plasmonic properties of the films. The results show that the bombardment of assisting ions causes higher crystallinity and higher resistivity. Both the experimental and fitting results show that assisting ions can improve the plasmonic performance of TiN x thin films. Higher E a leads to lower carrier concentration, lower plasma frequency, and lower optical losses. With E a increasing, the energy loss function shifts toward low photon energy. Importantly, IBAD– TiN x can serve as a promising plasmonic material in visible and near-IR region, and its plasmonic properties can be effectively tuned by assisting ions energy.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-017-0879-y