A Study on the Resistive Switching of La0.7Sr0.3MnO3 Film Using Spectromicroscopy

Resistive random access memory (ReRAM) is a promising candidate for next generation nonvolatile memory. La0.7Sr0.3.MnO3 (LSMO) of perovskite manganite family has a great deal of attention for ReRAM material because it makes resistive switching (RS) of interface type without a “forming process”. Howe...

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Published inApplied Mechanics and Materials Vol. 597; no. Advance Materials Development and Applied Mechanics; pp. 184 - 187
Main Authors Lee, Tae Won, Lee, Hong Sub, Choi, Yong June, Kang, Kyung Mun, Park, Hyung Ho, Park, Chang Sun, Han, Woo Je
Format Journal Article
LanguageEnglish
Published Zurich Trans Tech Publications Ltd 01.07.2014
Subjects
Correlation
Electronic structure
Manganites
Occupation
Perovskites
Random access memory
Switching
Vacancies
Resistive Switching
ReRAM
LSMO
Perovskite Manganite
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Summary:Resistive random access memory (ReRAM) is a promising candidate for next generation nonvolatile memory. La0.7Sr0.3.MnO3 (LSMO) of perovskite manganite family has a great deal of attention for ReRAM material because it makes resistive switching (RS) of interface type without a “forming process”. However, the full understanding of the electronic structure and RS mechanism of LSMO remains a challenging problem. Therefore, this study performed spectromicroscopic analysis to understand the relation between the change of electronic structure and RS characteristic. The results demonstrated the electron occupation by field-induced oxygen vacancies and strong correlation effects.
Bibliography:Selected, peer reviewed papers from the 2014 the 3rd International Conference on Advanced Materials Design and Mechanics (ICAMDM 2014), May 23-24, 2014, Singapore
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISBN:9783038351771
3038351776
ISSN:1660-9336
1662-7482
1662-7482
DOI:10.4028/www.scientific.net/AMM.597.184