Growth and properties of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates

The results on the growth of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates from the liquid phase in a field of temperature gradient have been discussed. The heterophase equilibria in the Ga–In–P–Sb–As system have been analyzed in the framework of the regular solution model. The...

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Published inPhysics of the solid state Vol. 58; no. 9; pp. 1751 - 1757
Main Authors Alfimova, D. L., Lunin, L. S., Lunina, M. L., Pashchenko, A. S., Chebotarev, S. N.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.09.2016
Springer
Springer Nature B.V
Subjects
Arsenic
Epitaxy
Heterostructures
Indium
Indium arsenides
Intermetallic compounds
Liquid phases
Luminescence
Optical properties
Physics
Physics and Astronomy
Semiconductors
Solid solutions
Solid State Physics
Substrates
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Summary:The results on the growth of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates from the liquid phase in a field of temperature gradient have been discussed. The heterophase equilibria in the Ga–In–P–Sb–As system have been analyzed in the framework of the regular solution model. The kinetics of the growth, the composition, the structural perfection, and the luminescence properties of Ga z In 1– z P x SbyAs 1– x – y /InAs isoperiodic heterostructures have been investigated.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783416090055