Wafer deformation in ultraviolet-nanoimprint lithography using an element-wise patterned stamp

• Published in: Microelectronic engineering Vol. 82; no. 1; pp. 28 - 34
• Main Authors: Sim, Young-suk, Kim, Ki-don, Jeong, Jun-ho, Sohn, Hyonkee, Lee, Eung-sug, Lee, Sang-chan
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.09.2005; Elsevier Science
• Subjects: Applied sciences; Electronics; Elementwise patterned stamp; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Ultraviolet-nanoimprint lithography; Wafer deformation; Wafer deformation; Ultraviolet-nanoimprint lithography; Elementwise patterned stamp; High resolution; Deformation; Multiple layer; Nanostructure; Nanolithography; Finite element method; Microelectronic fabrication; UV lithography; Low pressure; Photolithography; Cost lowering; Wafer
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2005.05.004

Nanoimprint lithography is a promising method for high-resolution, low-cost nanopatterning. In particular, ultraviolet-nanoimprint lithography (UV-NIL), which requires low imprint pressure, is effective for multi-layer processes. In this study, we investigated the non-uniformity of the residual layer thickness caused by wafer deformation in an experiment that examined different wafer thicknesses using UV-NIL with an element-wise patterned stamp (EPS). The EPS consisted of a number of elements, each separated by a channel. Experiments using the EPS were performed on an EVG620-NIL. Severe deformation of the wafer served as an obstacle to the spread of resin drops, which caused non-uniformity of the residual layer thickness. We also simulated the imprint process using a simplified model and finite element method to analyze the non-uniformity.