Formation of a silicon micropore array of a two-dimension electron multiplier by photo electrochemical etching

• Published in: Journal of semiconductors Vol. 30; no. 2; pp. 13 - 16
• Main Author: 高延军 端木庆铎 王国政 李野 田景全
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.02.2009
• Subjects: N型硅; 半导体; 电子倍增器; 腐蚀工艺; 表面处理
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/30/2/022001

A semiconductor PEC etching method is applied to fabricate the n-type silicon deep micropore channel array. In this method, it is important to arrange the direction of the micropore array along the crystal orientation of the Si substrate. Otherwise, serious lateral erosion will happen. The etching process is also relative to the light intensity and HF concentration. 5% HF concentration and 10-15 cm distance between the light source and the silicon wafer are demonstrated to be the best in our experiments. The n-type silicon deep micropore channel array with aperture of 3/2m and aspect ratio of 40-60, whose inner walls are smooth, is finally obtained.