Radiation Degradation Modeling of Bipolar Operational Amplifier Input Offset Voltage in LTSpice IV

• Published in: Applied Mechanics and Materials Vol. 565; no. Aerospace and Mechanical Engineering; pp. 138 - 141
• Main Authors: Shurenkov, V.V., Bakerenkov, A.S., Pershenkov, V.S., Solomatin, A.V., Belyakov, V.V.
• Format: Journal Article
• Language: English
• Published: Zurich Trans Tech Publications Ltd 01.06.2014
• Subjects: Bias; Degradation; Drift; Electric potential; Electronic equipment; Offsets; Operational amplifiers; Voltage; Total Dose; ELDRS; Operational Amplifiers; Space Environment; Bipolar Transistors; Input Offset Voltage; Input Bias Current
• ISBN: 3038351180; 9783038351184
• ISSN: 1660-9336; 1662-7482; 1662-7482
• DOI: 10.4028/www.scientific.net/AMM.565.138

Integrated circuits are used in electronic equipment of spaceships. Therefore, they are impacted by ionizing radiation during space mission. It leads to electronic equipment failures. At present operational amplifiers are base elements of analog electronic devices. Radiation impact leads to degradation of operational amplifiers input stages. Input bias current increasing and input offset voltage drifts are the results of ionizing radiation expose of operational amplifiers. Therefore, space application electronic equipment fails after accumulation of limit dose. It isn’t difficult to estimate radiation degradation of input bias currents of bipolar operational amplifiers, but estimation of dose dependence of input offset voltage drift is more complex issue. Schematic modeling technique based on Gummel–Poon transistor model for estimation of input offset voltage drift produced by space radiation impact was experimentally verified for LM324 operational amplifier and presented in this work. Radiation sensitive parameters of Gummel–Poon model were determined using 2N2907 bipolar pnp transistor.