A Novel Capacitorless DRAM Cell Using Superlattice Bandgap-Engineered (SBE) Structure With 30-nm Channel Length
We propose a novel SiGe superlattice bandgap-engineered (SBE) capacitorless dynamic random access memory (DRAM) cell with 30-nm channel length as a next-generation DRAM cell with high storage density and long retention time for practical implementation by 2-D technology computer-aided design simulat...
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Published in | IEEE transactions on nanotechnology Vol. 10; no. 5; pp. 1023 - 1030 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.09.2011
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | We propose a novel SiGe superlattice bandgap-engineered (SBE) capacitorless dynamic random access memory (DRAM) cell with 30-nm channel length as a next-generation DRAM cell with high storage density and long retention time for practical implementation by 2-D technology computer-aided design simulation. The SBE capacitorless DRAM cell uses a common source structure and different metal layers for the top gate word line (WL) from the bottom gate WL to realize a 6F 2 feature size. Thanks to the Si 0.8 Ge 0.2 superlattice quantum well and silicon dioxide (SiO 2 ) physical barrier, we obtained 213 μA/μm for the sensing margin and about 10 ms for the retention time. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1536-125X 1941-0085 |
DOI: | 10.1109/TNANO.2010.2098885 |