Engineering structure and properties of hafnium oxide films by atomic layer deposition temperature

• Published in: Thin solid films Vol. 479; no. 1; pp. 1 - 11
• Main Authors: Kukli, Kaupo, Aarik, Jaan, Uustare, Teet, Lu, Jun, Ritala, Mikko, Aidla, Aleks, Pung, Lembit, Hårsta, Anders, Leskelä, Markku, Kikas, Arvo, Sammelselg, Väino
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 23.05.2005; Elsevier Science
• Subjects: Atomic layer deposition; Cross-disciplinary physics: materials science; rheology; Dielectrics; Exact sciences and technology; Hafnium dioxide; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Vapor phase epitaxy; growth from vapor phase; 73.40.Qv (metal–insulator–semiconductor structures); Atomic layer deposition; Dielectrics; 77.55.+f (dielectric thin films); Hafnium dioxide; 72.80.Ng (disordered solids); 73.61.Ng (insulators); Grain boundaries; Inorganic compounds; Hafnium oxides; Growth rate; Polycrystals; Crystal growth from vapors; XRD; RHEED; 77.55.+f (dielectric thin films) Hafnium dioxide; CV characteristic; Temperature dependence; Atomic layer method; 73.40.Qv (metal-insulator-semiconductor structures); Stacking sequence; Transition element compounds; Binary compounds; Experimental study; CVD; Thickness; Transmission electron microscopy; Dielectric thin films
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2004.11.191

HfO 2 films were atomic layer deposited from HfCl 4 and H 2O on Si(100) in the temperature range of 300–600 °C. At low temperatures, films grow faster and are structurally more disordered, compared to films grown at high temperatures. At high temperatures, the films are better crystallized, but grow slower and contain grain boundaries extending from substrate to gate electrode. Film growth rate and capacitance of HfO 2 dielectric layers was improved by depositing stacked structures with polycrystalline films of higher purity at 600 °C on thin HfO 2 sublayer grown on Si at 300 °C.