Microwave frequency detector at X-band using GaAs MMIC technology

• Published in: Journal of semiconductors Vol. 30; no. 4; pp. 55 - 58
• Main Author: 张俊 廖小平 焦永昌
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.04.2009
• Subjects: IC技术; MEMS技术; X波段; 功率分频器; 微波功率合成; 电容式传感器; 砷化镓; 频率检测器
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/30/4/044009

The design, fabrication, and experimental results of an MEMS microwave frequency detector are presented for the first time. The structure consists of a microwave power divider, two CPW transmission lines, a microwave power combiner, an MEMS capacitive power sensor and a thermopile. The detector has been designed and fabricated on GaAs substrate using the MMIC process at the X-band successfully. The MEMS capacitive power sensor is used for detecting the high power signal, while the thermopile is used for detecting the low power signal. Signals of 17 and 10 dBm are measured over the X-band. The sensitivity is 0.56 MHz/fF under 17 dBm by the capacitive power sensor, and 6.67 MHz / μV under 10 dBm by the thermopile, respectively. The validity of the presented design has been confirmed by the experiment.