Crystal growth, dielectric and FIR reflectivity studies on PZN(0.91)-PT(0.09) single crystals

• Published in: Crystal research and technology (1979) Vol. 40; no. 8; pp. 773 - 777
• Main Authors: Arunmozhi, G., Ganesamoorthy, S., Kannan, C. V., de M. Gomes, E., Ramasamy, P.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.08.2005; WILEY‐VCH Verlag
• Subjects: crystal growth; dielectrics; IR reflectivity; PZN-PT; relaxor; solid solutions
• ISSN: 0232-1300; 1521-4079
• DOI: 10.1002/crat.200410429

Crystal growth of PZN‐PT single crystals using slow cooling flux technique with PbO flux is reported in this communication. Optimum growth conditions to maximize the amount of perovskite are also suggested. The grown crystals are characterized by dielectric and FIR spectroscopy. Temperature dependence of ε′ very close to the transition temperature shows a first order phase transition. Diffused phase transition and strong frequency dependence of ε′ around transition temperature are also observed. The real part of ε′ was found to obey the relation ε′ – ε∞ = χ′(T‐To)2. Dispersion in the ferroelectric phase is suggested to originate from ordering of domains. Competition in the B‐site occupancy by Zn, Nb and Ti ions is suggested to be the origin for the additional modes in the FIR reflectivity at room temperature. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)