Silicon based optical devices - photonic applications of anisotropically nanostructured silicon

• Published in: Physica status solidi. A, Applications and materials science Vol. 202; no. 8; pp. 1432 - 1436
• Main Authors: Diener, J., Künzner, N., Gross, E., Kovalev, D., Fujii, M.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.06.2005; WILEY‐VCH Verlag
• Subjects: 33.80.Wz; 42.70.Qs; 68.35.Ja; 78.66.Db
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.200461124

Anisotropic nanostructuring of bulk silicon (Si) wafers leads to a significant in‐plane optical anisotropy of single porous silicon (PSi) layers. Additionally a variation of the etching current in time allows a controlled modification of the porosity along the growth direction and therefore a three‐dimensional variation of the refractive index (in‐plane and in‐depth). This technique can be important for photonic applications since it is the basis of a development of a variety of novel, polarization‐sensitive, silicon‐based optical devices: retarders, dichroic Bragg reflectors, dichroic microcavities and planar Si‐based polarizers. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)