Compensation effects on hole transport in C-doped p-type GaPN dilute nitrides

Experimental studies of transport in GaPN dilute nitrides have evidenced low hole mobilities, which limit their applications in optoelectronics. Theoretical work to date has not explained the origin of such low hole mobilities. Here, we use full band cellular Monte Carlo methods to investigate hole...

Full description

Saved in:
Bibliographic Details
Published inAIP advances Vol. 11; no. 3; pp. 035207 - 035207-4
Main Authors Zou, Yongjie, Goodnick, Stephen M.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.03.2021
AIP Publishing LLC
Subjects
Compensation
Coordination compounds
Dilution
Doping
Hole mobility
Monte Carlo simulation
Nitrides
Optoelectronics
Self compensation
Online AccessGet full text

Cover

More Information
Summary:Experimental studies of transport in GaPN dilute nitrides have evidenced low hole mobilities, which limit their applications in optoelectronics. Theoretical work to date has not explained the origin of such low hole mobilities. Here, we use full band cellular Monte Carlo methods to investigate hole transport in C-doped GaPN dilute nitrides as a function of hole concentration. Good agreement between simulation and experiment is obtained by introducing a doping-dependent self-compensation. The results suggest that the reduction in the hole mobility is caused by the compensation for the p-type C doping, which is likely due to the formation of C–N complexes that act as donor scattering centers. This agrees well with the low C activation ratio reported by Liu et al. [Appl. Phys. Lett. 96, 032106 (2010)] and other studies on C–N complexes in GaP.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0043001