A complex luminescent defect in Be-doped oxygen-rich silicon

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Bibliographic Details
Published inSemiconductor science and technology Vol. 11; no. 7; pp. 996 - 1001
Main Authors Daly, S E, Henry, M O, McGuigan, K G, Carmo, M C do
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.07.1996
Institute of Physics
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Elemental semiconductors
Exact sciences and technology
Impurity and defect levels
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Ion implantation
Semiconductor materials
Photoluminescence
Magnetic field effects
Doped materials
Beryllium additions
Excited states
Experimental study
Defects
Oxygen additions
Donors
Uniaxial stress
Silicon
Energy-level splitting
Zero phonon process
Vibrational mode
Sideband
Codoping
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ISSN0268-1242
1361-6641
DOI10.1088/0268-1242/11/7/004

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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/11/7/004