Effect of ambient gas on undoped LEC GaAs crystal
Undoped GaAs crystals were grown by the LEC technique from quartz crucibles in N 2 , He, Ar or Kr ambient gases. The influence of the ambient gases on the electrical properties and dislocation densities of the crystals was examined, and it was found that even when a quartz crucible was used, undoped...
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Published in | Japanese Journal of Applied Physics Vol. 22; no. 11; pp. 1652 - 1655 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Tokyo
Japanese journal of applied physics
01.11.1983
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Subjects | |
Online Access | Get full text |
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Summary: | Undoped GaAs crystals were grown by the LEC technique from quartz crucibles in N
2
, He, Ar or Kr ambient gases. The influence of the ambient gases on the electrical properties and dislocation densities of the crystals was examined, and it was found that even when a quartz crucible was used, undoped GaAs crystals grown in N
2
ambient became semi-insulating, while crystals grown in rare gases were n-type conductive. This effect of N
2
was studied using secondary-ion mass spectrometry bulk analysis and low-temperature photoluminescence measurements. When the effect of the ambient gas on the Etch Pit Density (EPD) was investigated, dislocation densities were found to decrease in the order Kr, Ar, N
2
and He, as expected from their heat transfer efficiencies. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/jjap.22.1652 |