Effect of ambient gas on undoped LEC GaAs crystal

• Published in: Japanese Journal of Applied Physics Vol. 22; no. 11; pp. 1652 - 1655
• Main Authors: EMORI, H, MATSUMURA, T, KIKUTA, T, FUKUDA, T
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.11.1983
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Physics; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Crystal growth; Electrical conductivity; Hall mobility; Doping; Photoluminescence; Czochralski method; Secondary ion mass spectrometry; Experimental study; Controlled atmosphere; Single crystal; Inorganic compound; Dislocation density; Gallium Arsenides; Liquid encapsulation
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.22.1652

Undoped GaAs crystals were grown by the LEC technique from quartz crucibles in N 2 , He, Ar or Kr ambient gases. The influence of the ambient gases on the electrical properties and dislocation densities of the crystals was examined, and it was found that even when a quartz crucible was used, undoped GaAs crystals grown in N 2 ambient became semi-insulating, while crystals grown in rare gases were n-type conductive. This effect of N 2 was studied using secondary-ion mass spectrometry bulk analysis and low-temperature photoluminescence measurements. When the effect of the ambient gas on the Etch Pit Density (EPD) was investigated, dislocation densities were found to decrease in the order Kr, Ar, N 2 and He, as expected from their heat transfer efficiencies.