Gating effects in antiferromagnetic CuMnAs

Antiferromagnets (AFs) attract much attention due to their potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control the properties and the Néel vector direction of AFs. Among AFs, CuMnAs has been shown to exhibit specific pro...

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Bibliographic Details
Published inAIP advances Vol. 9; no. 11; pp. 115101 - 115101-5
Main Authors Grzybowski, M. J., Wadley, P., Edmonds, K. W., Campion, R. P., Dybko, K., Majewicz, M., Gallagher, B. L., Sawicki, M., Dietl, T.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.11.2019
AIP Publishing LLC
Subjects
Antiferromagnetism
Carrier density
Electric fields
Hall effect
Ionic liquids
Ions
Spintronics
Thin films
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Summary:Antiferromagnets (AFs) attract much attention due to their potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control the properties and the Néel vector direction of AFs. Among AFs, CuMnAs has been shown to exhibit specific properties that result in the existence of the current-induced spin-orbit torques commensurate with spin directions and topological Dirac quasiparticles. Here, we report on the observation of a reversible effect of an electric field on the resistivity of CuMnAs thin films, employing an ionic liquid as a gate insulator. The data allow us to determine the carrier type, concentration, and mobility independent of the Hall effect that may be affected by an anomalous component.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5124354