Benchmarking of Multi-Bridge-Channel FETs Toward Analog and Mixed-Mode Circuit Applications

• Published in: IEEE access Vol. 12; pp. 7531 - 7539
• Main Authors: Sreenivasulu, Vakkalakula Bharath, Neelam, Aruna Kumari, Panigrahy, Asisa Kumar, Vakkalakula, Lokesh, Singh, Jawar, Singh, Shiv Govind
• Format: Journal Article
• Language: English
• Published: Piscataway The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024; IEEE
• Subjects: Amplification; Analog circuits; Benchmarks; CMOS; CMOS inverter; CMRR; Current mirrors; GAAFET; Inverters; IRDS; Logic circuits; Nanowires; Operational amplifiers; operational transconductance amplifier (OTA); Radio frequency; ring oscillator; Transconductance
• ISSN: 2169-3536; 2169-3536
• DOI: 10.1109/ACCESS.2024.3350779

In this study, for the very first time developing of n- and p-type 3-D single-channel (SC) FinFET and gate-all-around (GAA) Multi-Bridge-Channel FETs (MBCFET) like nanowire FET (NWFET) and nanosheet FET (NSFET) are benchmarked towards device and circuit levels which are emulated with International Road map for Devices and Systems (IRDS) for sub-5-nm technology nodes. Compared to the FinFET, the MBCFETs exhibits higher ON-current ([Formula Omitted], switching ratio ([Formula Omitted], lower subthreshold-swing (SS) and drain-induced barrier lowering (DIBL). Except for extended parasitic capacitances ([Formula Omitted], our benchmarking results show that the NWFET and NSFET achieve the high-performance (HP) and low-power (LP) goals of IRDS. Furthermore, the NSFET delivers superior performance towards DC and analog/RF metrics. The cut-off frequency ([Formula Omitted] and gain bandwidth product (GBW) are higher (because of high [Formula Omitted] in the case of NSFET, even though the capacitive effect is significant. Further, the logic circuit applications like CMOS inverter and ring oscillator (RO) circuits are analyzed and compared in detail. The CMOS inverters propagation delays ([Formula Omitted] is reduced to 31% from FinFET to NWFET and 12% from NWFET to NSFETs is noticed. Also, the NWFET and NSFET based ROs offer 39% and 56% high oscillation frequency ([Formula Omitted] compared to that of FinFET counterpart. Finally, the single stage current mirror performance and operational transconductance amplifiers (OTA) gain and common mode rejection ratio (CMRR) are carried out towards analog and mixed-mode circuit applications.