A 5.2 GHz low-voltage low-noise amplifier with 0.35 μm CMOS technology

A low-voltage CMOS low-noise amplifier (LNA) architecture is presented. We have used a TSMC 0.35 µm CMOS high-frequency model to design a fully integrated 1 V, 5.2 GHz two-stage CMOS low-noise amplifier for RF front-end applications. No off-chip element is needed and a conventional common-source wit...

Full description

Saved in:
Bibliographic Details
Published inInternational journal of electronics Vol. 91; no. 9; pp. 551 - 561
Main Authors Liou, W.-R., Tsai, C.-A., Yeh, M.-L., Jan, G. E.
Format Journal Article
LanguageEnglish
Published London Taylor & Francis Group 01.09.2004
Taylor & Francis
Subjects
Applied sciences
Circuit properties
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Integrated circuits
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Performance evaluation
Low voltage
Noise figure
Complementary MOS technology
Low noise amplifier
Integrated design
Feedback regulation
Microwave amplifier
Impedance
Output stage
Gain
Online AccessGet full text

Cover

More Information
Summary:A low-voltage CMOS low-noise amplifier (LNA) architecture is presented. We have used a TSMC 0.35 µm CMOS high-frequency model to design a fully integrated 1 V, 5.2 GHz two-stage CMOS low-noise amplifier for RF front-end applications. No off-chip element is needed and a conventional common-source with feedback technology is used in this circuit. The first stage of the LNA is the common-source with feedback structure and the output stage is a buffer which increases the gain somewhat. An interstage negative-impedance circuit is added between the two stages of the LNA to further enhance the overall gain and thus upgrade its performance. Mainly because of the finite Q of the inductor, the negative-impedance circuit used in this interstage can cancel the losses in the first-stage inductor load. The input and output matching network is matched to approximately 50 Ω. The simulation results show that the amplifier provides a gain of 9.48 dB, a noise figure of 4.08 dB, and draws 13.4 mW from a 1 V supply. The S11 and S22 are both lower than −15 dB.
ISSN:0020-7217
1362-3060
DOI:10.1080/00207210412331319083