Optical and electrical properties of ZnO thin films doped with Al, V and Nb

• Published in: Physica status solidi. C Vol. 10; no. 4; pp. 709 - 712
• Main Authors: Angelov, Orlin, Lovchinov, Konstantin, Dimova-Malinovska, Doriana
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.04.2013; WILEY‐VCH Verlag; Wiley Subscription Services, Inc
• Subjects: Aluminum; Deposition; electrical and optical properties; Electrical properties; Niobium; Optical properties; r.f. magnetron sputtering; Thin films; Transmittance; transparent conductive oxide; Zinc oxide; ZnO
• ISSN: 1862-6351; 1610-1642
• DOI: 10.1002/pssc.201200559

This study addresses the optical and electrical properties of ZnO thin films doped with Al, V and Nb (ZnO:Al, ZnO:V and ZnO:Nb, respectively) deposited by r.f. magnetron sputtering in Ar atmosphere. The films are deposited on glass substrates without heating and heated at 100 °C, 150 °C and 275 °C. The optical spectra of transmittance and reflectance are measured and the optical band gap of the films is determined. The different films have band gap values in the range of 3.37‐3.57 eV. The films have about 90% transmittance and their resistivity is in the range of 8.5‐2.0 mΩ.cm. The influence of doping elements on the optical and electrical characteristics of the obtained thin films is discussed (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)