Optical properties of single non-polar GaN quantum dots

• Published in: Physica Status Solidi (b) Vol. 243; no. 7; pp. 1652 - 1656
• Main Authors: Rol, F., Gayral, B., Founta, S., Daudin, B., Eymery, J., Gérard, J.-M., Mariette, H., Dang, Le Si, Peyrade, D.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.06.2006; WILEY‐VCH Verlag; Wiley
• Subjects: 71.35.-y; 78.55.Cr; 78.67.Hc; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics; Quantum dots; Excitons; Temperature effects; Gallium nitrides; Quantum dots; Optical properties; Photoluminescence; Line widths; Internal field; Spatial resolution
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/pssb.200565406

We present a microphotoluminescence study of non polar GaN/AlN quantum dots (QDs) grown along the [11$ \bar 2 $0] axis. Despite the high QD density, single exciton lines could be isolated on the high energy side of the spectral distribution of the QD array emission. Linewidths down to 0.5 meV are reported, which is one order of magnitude lower than previously reported linewidths for polar GaN/AlN QDs. This difference is attributed to the drastic reduction of the internal field in non‐polar quantum dots. Temperature dependent measurements were performed up to 180 K. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)