Improvement of the electrical properties of compensated phosphorus-doped diamond by high temperature annealing

• Published in: Physica status solidi. A, Applications and materials science Vol. 202; no. 11; pp. 2141 - 2147
• Main Authors: Chevallier, J., Saguy, C., Barbé, M., Jomard, F., Ballutaud, D., Kociniewski, T., Philosoph, B., Fizgeer, B., Koizumi, S.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.09.2005; WILEY‐VCH Verlag
• Subjects: 71.55.Cn; 72.20.Fr; 78.30.Am
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.200561926

We have followed the evolution of the electrical and infrared absorption properties of two phosphorus‐doped epitaxial layers under a series of isochronal annealings between 800 °C and 1400 °C. In the as‐grown state, one sample is weakly compensated (Na/Nd= 0.15) while the other one is highly compensated (Na/Nd = 0.73). Under thermal annealing, both the electrical and infrared properties of the weakly compensated remain unchanged. On the contrary, the highly compensated sample becomes weakly compensated (Na/Nd = 0.15) after annealing at 1000 °C, 30 min while the neutral phosphorus concentration remains constant. This result is explained in terms of a migration of negatively charged acceptors followed by trapping on P+ donors. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)