Dynamical theory of X-ray diffraction by multilayered structures with microdefects

• Published in: Physica status solidi. A, Applications and materials science Vol. 204; no. 8; pp. 2606 - 2612
• Main Authors: Molodkin, V. B., Olikhovskii, S. I., Kislovskii, E. N., Fodchuk, I. M., Skakunova, E. S., Pervak, E. V., Molodkin, V. V.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.08.2007; WILEY‐VCH Verlag; Wiley-VCH
• Subjects: 61.10.Dp; 61.10.Nz; 61.72.Dd; 68.35.Dv; 68.65.Ac; 68.65.Fg; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Physics; Single-crystal and powder diffraction; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); X-ray diffraction and scattering; Gallium arsenides; Diffuse reflection; Quantum wells; Self consistency; Microdefect; XRD; Diffuse scattering; Indium arsenides; Defects; Recursion relations; Thickness; Multilayers; Rocking curve; Dynamic model; Concentration distribution
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.200675686

The dynamical recurrence relation for amplitudes of coherent waves in the multilayered structure with Coulomb‐type defects (2D and 3D defects or microdefects) has been derived and the expression for the diffuse component of reflection coefficient of this structure has been obtained with account for the dynamical redistribution of intensities of transmitted and diffracted coherent waves in each layer. The derived formulas, which self‐consistently take into account both the diffuse scattering contribution to the diffracted intensity and its extinction due to diffuse scattering, have been applied to analyze the rocking curve of InGaAs/GaAs multilayered structure with quantum well. Layer thicknesses and chemical compositions as well as strains and concentration profiles of chemical elements in layers have been found. Additionally, characteristics of dislocation loops in the substrate of the multilayered structure have been determined. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)