Stoichiometry effects and the Moss-Burstein effect for InN
We examine the Moss–Burstein effect for InN and demonstrate an independent method for determing its magnitude for high carrier concentration material. Consequently it is shown that the extent of the Moss–Burstein effect is less than 0.72 eV for a high carrier concentration sample with a 1.88 eV abso...
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Published in | Physica status solidi. A, Applications and materials science Vol. 203; no. 1; pp. 66 - 74 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Berlin
WILEY-VCH Verlag
01.01.2006
WILEY‐VCH Verlag |
Subjects | |
Online Access | Get full text |
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Summary: | We examine the Moss–Burstein effect for InN and demonstrate an independent method for determing its magnitude for high carrier concentration material. Consequently it is shown that the extent of the Moss–Burstein effect is less than 0.72 eV for a high carrier concentration sample with a 1.88 eV absorption edge. Early results are also provided for high band‐gap low carrier concentration InN films that can be grown reprodcibly, vindicating the work of early groups in the field. The role of stoichiometry is examined in relation to point defects that appear to be common to many forms of InN. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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Bibliography: | ark:/67375/WNG-80N01V1B-N istex:8D81D73EDA0784D1EF5AF4FD68791EA58C5A9A15 ArticleID:PSSA200563504 |
ISSN: | 1862-6300 1862-6319 |
DOI: | 10.1002/pssa.200563504 |