Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments

• Published in: Physica Status Solidi (b) Vol. 243; no. 7; pp. 1537 - 1540
• Main Authors: Dmowski, L. H., Dybko, K., Plesiewicz, J., Suski, T., Lu, H., Schaff, W., Kurouchi, M., Nanishi, Y., Konczewicz, L., Cimalla, V., Ambacher, O.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.06.2006; WILEY‐VCH Verlag; Wiley
• Subjects: 71.55.Eg; 72.20.Fr; 72.80.Ey; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Electronic transport in condensed matter; Exact sciences and technology; Mobility edges ; hopping transport; Physics; Defect states; Pressure effects; Localized states; Resonant states; Temperature effects; Doping; Electron mobility; Hall effect; Donor center; Indium nitrides; Carrier density
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/pssb.200565293

We have studied the pressure and temperature dependences of Hall electron concentration and mobility in degenerated, not intentionally doped InN samples. The results obtained for a whole set of samples with electron concentrations from 5.4 × 1017 cm–3 to 3.3 × 1018 cm–3 consistently revealed the existence of a localized donor type state resonant with the conduction band. The concentration of this state is of the same order in all studied samples and not exceeds 1018 cm–3. Population of this state determines electrical properties of InN samples with low carrier concentration. This donor state is not the main source of conducting electrons in these not intentionally doped samples and can be entirely populated and hidden in samples with high electron concentration exceeding about 3 × 1018 cm–3. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)