Phosphorus Vacancy as a Deep Level in AlInP Layers

Deep levels in AlInP layers, grown by metal-organic chemical vapor deposition (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Exa...

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Published inJapanese Journal of Applied Physics Vol. 39; no. 6B; pp. L567 - L568
Main Authors Sung, Wei-Jer, Wu, Yu-Rue, Lee, Shih-Chang, Wen, Tzu-Chi, Li, Tsang-Jou, Chang, Jung-Ting, Lee, Wei-I.
Format Journal Article
LanguageEnglish
Published 01.01.2000
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Summary:Deep levels in AlInP layers, grown by metal-organic chemical vapor deposition (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Examining this phosphorus-vacancy-related deep level provided a relatively simple means of understanding the phosphorus vacancy in AlInP, thus allowing us to determine an appropriate V/III mole ratio for growing AlInP.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.L567