A Novel High-Speed Multiplexing IC Based on Resonant Tunneling Diodes

• Published in: IEEE transactions on nanotechnology Vol. 8; no. 4; pp. 482 - 486
• Main Authors: CHOI, Sunkyu, JEONG, Yongsik, LEE, Jongwon, YANG, Kyounghoon
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.07.2009; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Circuit properties; Design. Technologies. Operation analysis. Testing; Devices; Digital circuits; Diodes; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Heterojunction bipolar transistors; High speed integrated circuits; Indium phosphide; Integrated circuit technology; Integrated circuits; Logic; Logic circuits; Microwave devices; Monolithic integrated circuits; Monostable-bistable logic element; Multiplexing; quantum effect; Resonant tunneling; Resonant tunneling devices; resonant tunneling diode; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Multiplexing; Binary compound; Negative differential conductivity; Resonant tunneling diodes; State of the art; Current-mode logic; Power circuit; Monostable―bistable logic element; resonant tunneling diode; High-speed integrated circuits; Quantum effect; Power electronics; Quantum electronics; Indium phosphide; Microwave integrated circuits; Power consumption; Digital circuit; Heterojunction bipolar transistors; Monolithic integrated circuit; Low-power electronics
• ISSN: 1536-125X; 1941-0085
• DOI: 10.1109/TNANO.2009.2013462

A new multiplexing IC based on the resonant tunneling diode (RTD) is proposed. The unique negative differential resistance characteristics arising from quantum effects of the RTD enable us to develop a new functional low-power digital circuit. The proposed multiplexing IC consists of two current-mode-logic monostable-bistable transition logic elements (CML-MOBILEs) based on the RTD and a low-power selector circuit block. The proposed circuit has been fabricated by using an InP RTD/ heterojunction bipolar transistor monolithic microwave integrated circuit technology. The multiplexing operation of the fabricated quantum effect IC has been confirmed up to 45 Gb/s for the first time as a monolithic technology based on the quantum effect devices. The dc power consumption is only 23 mW, which is found to be one-fourth of the current state-of-the-art conventional transistor-based multiplexing IC.